Author:
Franco Jacopo,Kaczer Ben,Groeseneken Guido
Reference54 articles.
1. K.O. Jeppson, C.M. Svensson, Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices. J. Appl. Phys. 48(5), 2004–2014 (1977)
2. B.E. Deal, M. Sklar, A.S. Grove, E.H. Snow, Characteristics of the surface-state charge (Qss) of thermally oxidized silicon. J. Electrochem. Soc. 114(3), 266–274 (1967)
3. V. Huard, M. Denais, C. Parthasarathy, NBTI degradation: from physical mechanism to modeling. Microelect. Reliab. 46(1), 1–23 (2006)
4. S. Tsujikawa et al., Negative bias temperature instability of pMOSFETs with Ultra-thin SiON gate dielectrics, in IEEE Proceedings of IRPS 2003, pp. 183–188
5. G. Groeseneken, H.E. Maes, N. Beltran, R.F. De Keersmaecker, A reliable approach to charge pumping measurements in MOS transistors. IEEE Trans. Electron Dev. 31(1), 42–53 (1984)