The Influence of Dopants on the Leakage Current in PZT Thin-Film Ferroelectric Capacitors-Reference-Cited by-同舟云学术

The Influence of Dopants on the Leakage Current in PZT Thin-Film Ferroelectric Capacitors

Published:1995 Issue: Volume: Page:279-289
ISSN:
Container-title:Science and Technology of Electroceramic Thin Films
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Author:

Wouters D. J.,Willems G.,Groeseneken G.,Maes H. E.,Brooks K.,Klissurska R.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-017-2950-5_20

Reference17 articles.

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4. Yoo, I.K., Desu, S.B. and Xing, J. (1993), in Ferroelectric Thin Films III, Myers, E.R., Tuttle, B.A., Desu, S.B. and Larsen, P. (eds), Mat. Res. Soc. Symp. Proc. Vol. 310, MRS, Pittsburgh, pp. 165.

5. Chen, X., Kingon, A.I., and Auciello, O. (1992), Proc. of the 8th ISAF Conference 1992, IEEE, pp. 229.

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