Reactive Ion Etching of GaAs and Related III-V Compounds-Reference-Cited by-同舟云学术

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Reactive Ion Etching of GaAs and Related III-V Compounds

Published:1986 Issue: Volume: Page:297-315
ISSN:
Container-title:Erosion and Growth of Solids Stimulated by Atom and Ion Beams
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Author:

Dzioba Steven

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-009-4422-0_17.pdf

Reference17 articles.

1. L.A. D’Asaro, A.D. Butheras, J.V. DiLorenzo, D.E. Iglesias and S.H. Wemple, Inst. Phys. Conf. Ser., 5 (1981) 267.

2. L.A. Coldren, K. Furuya and B.I. Hiller, J. Electrochem. Soc., 130 (1983) 1918.

3. H. Matsueda and M. Nakamura, Appl. Optics, 23 (1984) 779.

4. B. Chapman, Semiconductor Int., Nov. 1980, 139.

5. R.E. Williams, Gallium Arsenide Processing Techniques, Artech House Inc., 1984.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields;Critical Reviews in Solid State and Materials Sciences;1994-01

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