Isotopic Labeling Studies of Oxynitridation in Nitric Oxide (NO) of Si and SiO2-Reference-Cited by-同舟云学术

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Isotopic Labeling Studies of Oxynitridation in Nitric Oxide (NO) of Si and SiO2

Published:1998 Issue: Volume: Page:165-179
ISSN:
Container-title:Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
language:
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Author:

Trimaille I.,Ganem J.-J.,Gosset L. G.,Rigo S.,Baumvol I. J. R.,Stedile F. C.,Rochet F.,Dufour G.,Jolly F.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-011-5008-8_12

Reference41 articles.

1. Terman, L.M. (1997) The impact of device scaling limits, Applied Surface Science 117/118 1–10.

2. Hara H. (1997) Some issues yet to be solved for the age of 0.1 um technologies, Applied Surface Science 117/118 11–19.

3. Bohr M.T. (1996) Technology development strategies for the 21st century, Applied Surface Science 100/101 534–540.

4. The National Technology Roadmap to Semiconductors (1994), Semiconductor Industries Association.

5. Ono M. et al. (1995) A 40 nm gate length N-MOSFET, IEEE Trans. Electron Devices ED-42 1822–1830.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Beam Studies of Silicon Oxidation and Oxynitridation;Fundamental Aspects of Silicon Oxidation;2001

2. Atomic transport during growth of ultrathin dielectrics on silicon;Surface Science Reports;1999-12

3. Furnace Oxynitridation in Nitric Oxide of Thin Silicon Oxide: Atomic Transport Mechanisms and Interfacial Microstructure;MRS Proceedings;1999

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