1. H. Martinot, P. Rossel, Multiplication de porteurs dans la zone de pincement des transistors MOS, Electron. Letters, vol.7 No 5/6, 1971, pp. 118–120.
2. W.W. Lattin, J.L. Rutledge, Solid State Electron., Vol. 16, 1973, pp. 1043.
3. S. Sheffield, B. Lalevic, The effects of operating frequency on propagation delay in SOS digital integrated circuits, IEDM, Washington, 1976, paper 8.6.
4. D.J. Mc Greivy (Hughes), Factors affecting leakage currents in SOS MOS transistors, SOS Workshop, 15-26 September 1975, Lake Tahoe.
5. J.L. Moll, R. Van Overstraeten, Charge multiplication in silicon P-N junctions, Solid State Electron., vol. 6, pp. 147–157.