1. Various depth profiling techniques are recently reviewed in Proc. on Silicon Device Processing, ed. by C.P. Marsden, National Bureau of Standards, Spec. Publ. 337, Gaithersburg, Md., pp. 99–155, 1972, and also in J. Vac. Sci. Tech. 12, p. 356-405, 1975.
2. W.H. Schroen, G.A. Lee, and F.W. Voltmer, “Comparison of the spreading resistance probe with other silicon characterization techniques,” Proc. Spreading Resistance Symp., ed. by J.R. Ehrstein, NSB-SP 400-10, Gaithersburg, Md., 1974, pp. 155–168.
3. W.H. Schroen, “Application of the spreading resistance technique to silicon characterization for process and device modeling,” Proc. Spreading Resistance Symp., ed. by J.R. Ehrstein, NSB SP 400-10, Gaithersburg, Md., 1974, p. 235–247.
4. Y.T. Yeh, “Current status of the spreading resistance probe and its application,” in Silicon Device Processing, ed. by C.P. Marsden, NBS Spec. Publ. 337, Gaithersburg, Md., 1972, pp. 111–122.
5. R.P. Donovan and R.A. Evans, “Incremental sheet resistivity technique for determining diffusion profiles,” in Silicon Device Processing, ed. by C.P. Marsden, NSB Spec. Publ. 337, Gaithersburg, Md., 1972, pp. 123–131.