Charge Build-Up and Intrinsic Bistability in Resonant Tunneling-Reference-Cited by-同舟云学术

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Charge Build-Up and Intrinsic Bistability in Resonant Tunneling

Published:1990 Issue: Volume: Page:227-242
ISSN:
Container-title:Analogies in Optics and Micro Electronics
language:
Short-container-title:

Author:

Eaves L.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-009-2009-5_14

Reference43 articles.

1. L.L. Chang, L. Esaki and R. Tsu, Appl. Phys. Lett. 24 (1974) 593.

2. Springer Series in Solid-State Science 83;S Hiyamizu,1988

3. F. Capasso, Heterostructure Band Discontinuities: Physics and Device Applications, eds. F. Capasso and G. Margaritondo (North Holland, 1987) 339.

4. S. Luryi, Heterostructure Band Discontinuities: Physics and Device Applications, eds. F. Capasso and G. Margaritondo (North Holland, 1987) 489.

5. B.R. Snell, K.S. Chan, F.W. Sheard, L. Eaves, G.A. Toombs, D.K. Maude, J.C. Portal, S.J. Bass, P. Claxton, G. Hill and M.A. Pate, Phys. Rev. Lett. 59 (1987) 2806.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant Tunneling;digital Encyclopedia of Applied Physics;2003-04-15

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