Nanowire FET Simulations Based on the Nonequilibrium Green’s Function Formalism
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-017-9780-1_100943
Reference21 articles.
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2. Roy, K., Mukhopadhyay, S., Mahmoodi-Meimand, H.: Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits. Proc. IEEE 91, 305 (2003)
3. Lo, S.-H., Buchanan, D.A., Taur, Y., Wang, W.: Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs. IEEE Trans. Electron. Dev. 18, 209 (1997)
4. Tsutsui, G., Saitoh, M., Nagumo, T., Hiramoto, T.: Impact of SOI thickness fluctuation on threshold voltage variation in ultra-thin body SOI MOSFETs. IEEE Trans. Nanotechnol. 4, 369 (2005)
5. Knoch, J., Lengeler, B., Appenzeller, J.: Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI. IEEE Trans. Electron. Dev. 49, 1212 (2002)
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