Current Status of the Research on III-V Mononitride Thin Films for Electronic and Optoelectronic Applications-Reference-Cited by-同舟云学术

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Current Status of the Research on III-V Mononitride Thin Films for Electronic and Optoelectronic Applications

Published:1990 Issue: Volume: Page:653-669
ISSN:
Container-title:The Physics and Chemistry of Carbides, Nitrides and Borides
language:
Short-container-title:

Author:

Davis Robert F.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-009-2101-6_37.pdf

Reference116 articles.

1. Wentorf, R.H. Jr., (1962), J-Chem. Phys. 36, 1990–1998.

2. Devries, R.C. (1972), Report No. 72 CRD178, General Electric Company, Schenectady, N.Y. 12301, 17 pages.

3. Sokolowski, M. (1979), J. Cryst. Growth 46, 136–138.

4. Erler, H-J., Reisse, G. and Weissmantel, C. (1980) Thin Solid Films 65, 233–239.

5. Weissmantel, C. (1981), J. Vac. Sci. Technol. 18, 179–185.

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1. Ceramic thin film synthesis via arcjet CVD;31st Joint Propulsion Conference and Exhibit;1995-07-10

2. Optical third-harmonic investigations of gallium nitride nucleation layers on sapphire;Journal of Electronic Materials;1994-11

3. ECR-Assisted Reactive Magnetron Sputtering of InN;MRS Proceedings;1994

4. Growth Morphology of InN Thin Films by Scanning Tunneling and Atomic Force Microscopies and X-Ray Scattering;MRS Proceedings;1993

5. Structural and Electrical Properties of Thermally Annealed InN Thin Films on Native and Ain-Nucleated (00.1) Sapphire;MRS Proceedings;1993

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