Study of Ion Implanted n+ Layers for Silicon solar Cells-Reference-Cited by-同舟云学术

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Study of Ion Implanted n+ Layers for Silicon solar Cells

Published:1978 Issue: Volume: Page:113-124
ISSN:
Container-title:Photovoltaic Solar Energy Conference
language:
Short-container-title:

Author:

Zignani F.,Cembali F.,Galloni R.,Pedulli L.,Servidori M.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-009-9840-7_9.pdf

Reference13 articles.

1. R.Galloni, G.Gavina, R.Lotti, P.Piombini, Sistema Automatico, to be publ.

2. F.Cembali, R.Galloni, F.Mousty, R.Rosa, F.Zignani, Rad.Effects, 21, 255 (1974).

3. F.Cembali, R.Galloni, F.Zignani, J of Phys.E: Sci. Instrum., 7, 698, (1974).

4. F.Restrepo, C.E.Backus, IEEE Trans. Eletr. Dev., 1196, Oct. 1976.

5. J.F.Gibbons, W.S.Johnson, S.W.Mylroie,“Projected Range Statistics”(Halstead Pr.)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive computer program for ion penetration in solids;Radiation Effects;1980-01

2. Experimental and computer analysis of P+-ion penetration tails in a SIO2-Si two-layer system;Journal of Applied Physics;1980

3. Bibliography;IEE Journal on SolidState and Electron Devices;1978

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