Author:
Kump Michael,Dutton Robert W.
Reference35 articles.
1. A. M. Lin, R. W. Dutton, and D. A. Antoniadis, “The Lateral Effect of Oxidation on Boron Diffusion in <100> Silicon,” Applied Phys. Lett., vol. 35, pp. 799–801, Nov. 1979.
2. M. Hamasaki, J. Suzuki, and T. F. Shimada, “Lateral Effect of Oxidation Enhanced Diffusion in Silicon,” in IEEE Int. Electron Devices Meet., Dig. Tech. Papers, pp. 542–545, Dec. 1981.
3. K. Chiu, J. Moll, and J. Manoliu, “A Bird’s Beak Free Local Oxidation Technology Feasible for VLSI Circuits Fabrication,” IEEE Trans. Electron Devices, vol. ED-29, pp. 536–540, Apr. 1982.
4. A. R. Neureuther, C. H. Ting, and C-Y Liu, “Application of Line-Edge Profile Simulation to Thin-Film Deposition Processes,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1449–1455, Aug. 1980.
5. W. G. Oldham, A. R. Neureuther, C. Sung, J. L. Reynolds, and S. N. Nandgaonkar, “A General Simulator for VLSI Lithography and Etching Processes: Part II — Application to Deposition and Etching,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1455–1459, Aug. 1980.
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