Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel
Publisher
Springer Netherlands
Reference83 articles.
1. H.S. Nalwa, Ferroelectric Polymers (Dekker, New York, 1995)
2. T. Furukawa, Phase. Trans. 18, 143 (1989)
3. R.G. Kepler, R.A. Anderson, Adv. Phys. 41, 1 (1991)
4. S. Horiuchi, Y. Tokunaga, G. Giovannetti, S. Picozzi, H. Itoh, R. Shimano, R. Kumai, Y. Tokura, Nature 463, 789 (2010)
5. R.C.G. Naber, P.W.M. Blom, A.W. Marsman, D.M. Leeuw, Appl. Phys. Lett. 85, 2032 (2004)