Development of High-Endurance and Long-Retention FeFETs of Pt/Ca y Sr1−y Bi2Ta2O9/(HfO2) x (Al2O3)1−x /Si Gate Stacks-Reference-Cited by-同舟云学术

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Development of High-Endurance and Long-Retention FeFETs of Pt/Ca y Sr1−y Bi2Ta2O9/(HfO2) x (Al2O3)1−x /Si Gate Stacks

Published:2016 Issue: Volume: Page:23-56
ISSN:0303-4216
Container-title:Topics in Applied Physics
language:
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Author:

Takahashi Mitsue,Sakai Shigeki

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-024-0841-6_2

Reference38 articles.

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2. International Technology Roadmap for Semiconductors, ITRS Tables’ summaries, Emerging Research Devices, Tables ERD3, ERD4a and ERD4b (2013)

3. Y. Tarui, T. Hirai, K. Teramoto, H. Koike, K. Nagashima, Appl. Surf. Sci. 113–114, 656 (1997)

4. S. Sakai, M. Takahashi, K. Takeuchi, Q.-H. Li, T. Horiuchi, S. Wang, K.-Y. Yun, M. Takamiya, T. Sakurai, in Proceedings of 23rd IEEE Non-Volatile Semiconductor Memory Workshop and 3rd International Conference on Memory Technology and Design (2008), p. 103

5. X. Zhang, M. Takahashi, K. Takeuchi, S. Sakai, Jpn. J. Appl. Phys. 51, 04DD01 (2012)

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1. Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications;Superlattices and Microstructures;2018-09

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