Mapping analyses of Fe-diffused mc-Si using Mössbauer microscope and photoluminescence
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-007-4762-3_60.pdf
Reference6 articles.
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2. Sugimoto, H., Inoue, M., Tajima, M., Ogura, A., Ohshita, Y.: Analysis of intra-grain defects in multicrystalline silicon wafers by photoluminescence mapping and spectroscopy. Jpn. J. Appl. Phys. 45, L641 (2006)
3. Yoshida, Y., Horie, S., Niira, K., Fukui, K., Shirasawa, K.: In situ observation of iron atoms in multicrystalline silicon at 1273 and 300 K by Mössbauer spectroscopy. Physica B 376–377, 227 (2006)
4. Yoshida, Y., Aoki, S., Sakata, K., Suzuki, Y., Adachi, M., Suzuki, K.: Iron impurities in multicrystalline silicon studied by Mössbauer spectroscopy. Physica B 401–402, 119–122 (2007)
5. Yoshida, Y., Suzuki, K., Hayakawa, K., Yukihira, K., Soejima, H.: Mössbauer spectroscopic microscope. Hyperfine Interact. 188, 121–126 (2009)
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