Si Based Magnetic Semiconductors
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-007-6892-5_21
Reference187 articles.
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4. Huang BQ, Jang H-J, Appelbaum I (2008) Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices. Appl Phys Lett 93:162508
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