ULTRATHIN OXIDE FILMS FOR ADVANCED GATE DIELECTRICS APPLICATIONS CURRENT PROGRESS AND FUTURE CHALLENGES
Publisher
Springer Netherlands
Reference116 articles.
1. Buchanan, D.A. (1999) Scaling the gate dielectric: Materials, integration and reliability, IBM J. Res. and Develop, 43, 245. 2. Feldman, L., Gusev, E.P., and Garfunkel, E. (1998) Ultrathin dielectrics in Si microelectronics — an overview, in E. Garfunkel, E.P. Gusev and A.Y. Vul’ (eds.), Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, Kluwer Academic Publishers, Dordrecht/Boston/London p. 1. 3. Green, MX., Gusev, E.P., Garfunkel, E., Degraeve, R., and Groeseneken, G. (2000) Understanding the limits of ultrathin gate dielectrics for silicon microelectronics: A review of the processing, structure and physical and electrical properties of 5 nm SiO2 and Si-O-N layers, J. Appl Phys. (Review) 88, in press. 4. Massoud, H.Z., Poindexter, E.H., and Helms, C.R. (eds) (1996) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface—3, The Electrochemical Society, Pennington, NJ. 5. Helms, C.R. and Poindexter, E.H. (1994) The Si-SiO2 system: its microstructure and imperfections, Rep. Prog. Phys. 57, 791.
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