New Terahertz Security Opportunities Based on Nanometric Technology
Author:
Hartnagel Hans L.
Publisher
Springer Netherlands
Reference17 articles.
1. Ong DS, Hartnagel HL (2008) Enhanced THz frequency multiplier efficiency by quasi-ballistic electron reflection in double-heterojunction structures. EPL 81:48004
2. Hartnagel HL, Ong DS, Oprea I (2009) Ballistic Electron Wave Swing (BEWAS) to generate THz-signal power. Frequenz 63:60–62
3. Nicolae B, Ruf M, Schür J, Schmidt L-P, Hartnagel HL (2008) A heterostructure barrier charge swing device for frequency multiplication at 306 GHz. IEEE MTT-S, Atlanta, GA, USA, June 2008, pp 1545–1548
4. Hargreaves S, Bignell L, Lewis R, Schoenherr D, Saglam M, Hartnagel H (2008) Investigation of p-GaAsSb as a new candidate THz emitter. J Electrochem Soc ECS 155:H734–H737
5. Hartnagel H, Dragoman M (2010) Heterostructure field emitter of electrons to generate THz signals by laser pulses. In: Proceedings of the IVNC 2010, Palo Alto, 26–30 July