A new analytical approach to threshold voltage modeling of triple material gate-all-around heterojunction tunnel field effect transistor

Author:

Usha C.ORCID,Vimala P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Study of GAA Silicon Nanowire MOSFETs for Better Performance;2023 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT);2023-07-14

2. Nanowire Field Effect Transistor with Multiple Gates: A Simulation Study;2023 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT);2023-07-14

3. Vertical-Architecture based Nanowire TFET using Gate Engineering Technique- Design and Analysis;2022 IEEE International Conference on Current Development in Engineering and Technology (CCET);2022-12-23

4. Analysis of 8 bit vedic multiplier using different full adder techniques;2022 3rd International Conference on Smart Electronics and Communication (ICOSEC);2022-10-20

5. Design and Analysis of Two-stage CMOS LCD Buffer Operational Amplifier with Additional Load Capacitance;2022 3rd International Conference on Electronics and Sustainable Communication Systems (ICESC);2022-08-17

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