Component-Level Reliability: Physical Models and Testing Regulations
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-00295-8_18-1
Reference52 articles.
1. Arik M, Weaver S, Becker CA, Hsing M, Srivastava A (2003) Effects of localized heat generations due to the color conversion in phosphor conversion in phosphor particles and layers of high brightness light emitting diodes. In: ASME international electronic packaging technical conference and exhibition, pp 1–9
2. Barton DL, Osinski M, Perlin P, Eliseev PG, Lee J (1999) Single-quantum well InGaN green light emitting diode degradation under high electrical stress. Microelectron Reliab 39:1219
3. Buso S, Spiazzi G, Meneghini M, Meneghesso G (2008) Performance degradation of high brightness light emitting diodes under DC and pulsed bias. IEEE Trans Device Mater Reliab 8:312
4. Bychikhin S, Pogany D, Vandamme LJK, Meneghesso G, Zanoni E (2005) Low frequency noise sources in as-prepared and aged GaN-based light-emitting diodes. J Appl Phys 97:123714
5. Cao XA, Sandvik PM, LeBoeuf SF, Arthur SD (2003) Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses. Microelectron Reliab 43:1987
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