Fundamentals
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-72556-7_2
Reference110 articles.
1. Ataev, B.M., Bagamadova, A.M., Djabrailov, A.M., Mamedov, V.V., Rabadanov, R.A.: Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVD. Thin Solid Films 260(1), 19–20 (1995). http://dx.doi.org/10.1016/0040-6090(94)09485-3
2. Albrecht, J.D., Ruden, P.P., Limpijumnong, S., Lambrecht, W.R.L., Brennan, K.F.: High field electron transport properties of bulk ZnO. J. Appl. Phys. 86(12), 6864 (1999). http://dx.doi.org/10.1063/1.371764
3. Boesen, G.F., Jacobs, J.E.: ZnO field-effect transistor. Proc. IEEE 56(11), 2094–2095 (1968). http://dx.doi.org/10.1109/PROC.1968.6813
4. Bao, Z., Locklin, J.J.: Optical Science and Engineering. Organic Field-Effect Transistors, vol. 128. CRC, Boca Raton (2007). ISBN: 0–8493–8080–4
5. Barquinha, P., Pimentel, A., Marques, A., Pereira, L., Martins, R., Fortunato, E.: Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide. J. Non-Cryst. Solids 352(9–20), 1749–1752 (2006). http://dx.doi.org/10.1016/j.jnoncrysol.2006.01.067
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