Publisher
Springer International Publishing
Reference5 articles.
1. A. Rizk, I. Saadat, ALD Al-doped ZnO thin film as semiconductor and piezoelectric material: process synthesis, in The IoT Physical Layer, ed. by M. Elfadel, M. Ismail (Springer, Berlin, 2018), pp. 23–46
2. A. Rizk, I. Saadat, ALD Al-doped ZnO thin film as semiconductor and piezoelectric material: characterization, in The IoT Physical Layer, ed. by M. Elfadel, M. Ismail (Springer, Berlin, 2018), pp. 47–68
3. E. Kim, J. Bak, J. Choi, S. Yoon, Effect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications. J. Vac. Sci. Technol. B 32(2014), 41202 (2014)
4. E. Kim, J. Bak, J. Choi, S. Yoon, Thickness and composition effects of Al-doped ZnO channels prepared by atomic layer deposition on the device behaviors of oxide thin-film transistors. 26502(2012), 31210
5. K. Jang, H. Park, S. Jung, N. Van Duy, Y. Kim, J. Cho, H. Choi, T. Kwon, W. Lee, D. Gong, S. Park, J. Yi, D. Kim, H. Kim, Optical and electrical properties of 2wt.% Al$$_2$$2O$$_3$$3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators. Thin Solid Films 518(10), 2808–2811 (2010)