Tunneling Between Bilayers of Graphene
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-69257-9_8
Reference25 articles.
1. S.C. de la Barrera, R.M. Feenstra. Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures. Appl. Phys. Lett. 106(9), 093115 (2015). https://doi.org/10.1063/1.4914324
2. E. McCann, V.I. Fal’ko, Landau-level degeneracy and quantum hall effect in a graphite bilayer. Phys. Rev. Lett. 96, 086805 (2006). https://doi.org/10.1103/PhysRevLett.96.086805
3. E. McCann, Asymmetry gap in the electronic band structure of bilayer graphene. Phys. Rev. B 74, 161403 (2006). https://doi.org/10.1103/PhysRevB.74.161403
4. H. Min, B. Sahu, S.K. Banerjee, A.H. MacDonald, Ab initio theory of gate induced gaps in graphene bilayers. Phys. Rev. B 75, 155115 (2007). https://doi.org/10.1103/PhysRevB.75.155115
5. E.V. Castro, K.S. Novoselov, S.V. Morozov, N.M.R. Peres, J.M.B. Lopes dos Santos, J. Nilsson, F. Guinea, A.K. Geim, A.H. Castro Neto, Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. Phys. Rev. Lett. 99, 216802 (2007). https://doi.org/10.1103/PhysRevLett.99.216802
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