Publisher
Springer International Publishing
Reference26 articles.
1. M. Boniardi, A. Redaelli, C. Cupeta, F. Pellizzer, L. Crespi, G. D’Arrigo, A.L. Lacaita, G. Servalli, Optimization metrics for phase change memory (PCM) cell architectures. in International Electron Devices Meeting, 2014, pp. 681–684
2. T. Happ, M. Breitwisch, A. Schrott, J. Philipp, M. Lee, R. Cheek, T. Nirschl, M. Lamorey, C. Ho, S. Chen, C. Chen, E. Joseph, S. Zaidi, G. Burr, B. Yee, Y. Chen, S. Raoux, H. Lung, R. Bergmann, C. Lam, Novel one-mask self-heating pillar phase change memory. in IEEE Symposium on VLSI Technology Digest of Technical Papers, 2006 pp.120–121
3. M.H.R. Lankhorst, B.W.S.M.M. Ketelaars, R.A.M. Wolters, Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nat. Mater. 4(4), 347–352 (2005)
4. D. Kang, D. Lee, H.-M. Kim, S.-W. Nam, M.-H. Kwon, K.-B. Kim, Analysis of the electric field induced elemental separation of Ge2Sb2Te5 by transmission electron microscopy. Appl. Phys. Lett. 95(011904), 1–3 (2009)
5. L. Crespi, A. L. Lacaita, M. Boniardi, E. Varesi, A. Ghetti, A. Redaelli, G. D’Arrigo, Modeling of atomic migration phenomena in phase change memory devices. in IEEE International Memory Workshop, 2015 pp. 1–4
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 3DXpoint fundamentals;Semiconductor Memories and Systems;2022