Stress-induced Degradation and Defect Studies in Strained-Si/SiGe MOSFETs
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-03002-9_5
Reference16 articles.
1. C. K. Maiti, S. Chattopadhyay, and L. K. Bera, “Strained-Si Heterostructure Field Effect Devices”, CRC Press, FL, USA, 2007.
2. L. K. J. Vandamme, “Noise as a diagnostic tool for quality and reliability of electronic devices”, IEEE Trans. Electron Dev., vol. 41, pp. 2176-2187, 1994.
3. M. J. Kirton and M. J. Uren, “Noise in solid-state microstructures: a new perspective on individual defects, interface states and lowfrequency (1/f) noise”, Advances in Physics, vol. 38, pp. 367-468, 1989.
4. A. L. McWorther, “Semiconductor surface physics”, University of Pennsylvania Press, 1957.
5. F. N. Hooge, “1/f noise is no surface effect”, Phys. Lett. A, vol. 29A, pp. 139-140, 1969.
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