Characterization of Carbon Nanotube Field Effect Transistor Using Simulation Approach-Reference-Cited by-同舟云学术

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Characterization of Carbon Nanotube Field Effect Transistor Using Simulation Approach

Published:2014 Issue: Volume: Page:585-588
ISSN:1863-5520
Container-title:Physics of Semiconductor Devices
language:
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Author:

Dass Devi,Prasher Rakesh,Vaid Rakesh

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-03002-9_147

Reference11 articles.

1. H. Hasegawa, S. Kasai, and T. Sato, IEICE Transaction on Electron, E87-C, 1757 (2004).

2. A.M. Hashim, H.H. Pung, C.Y. Pin, Jurnal Teknologi, 49, 129 (2008).

3. D. Dass, R. Prasher, and R. Vaid, Journal of nano and electronic physics, 5, 020141 (2013).

4. P. L. McEuen, M. S. Fuhrer, and H. Park, IEEE Transaction on Nanotechnology, 1, 78 (2002).

5. M. S. Dresselhaus, Carbon Nanotubes, 1998. Physics World.com.

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