Characterization of MOSFET Interface States Using the Charge Pumping Technique-Reference-Cited by-同舟云学术

Characterization of MOSFET Interface States Using the Charge Pumping Technique

Published:2014-10-04 Issue: Volume: Page:231-255
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Container-title:Hot Carrier Degradation in Semiconductor Devices
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Author:

Aichinger Thomas,Nelhiebel Michael

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-08994-2_8

Reference30 articles.

1. J.S. Brugler, P.G.A. Jespers, Charge pumping in MOS devices. IEEE Trans. Electron Devices 16, 297–302 (1969)

2. X.M. Li, M.J. Deen, A new charge pumping method for determining the spatial interface state density distribution in MOSFETs. IEEE Trans. Electron Devices 40, 1768–1779 (1990)

3. G. Barbottin, A. Vapaille, J. L. Autran, Instabilities in Silicon Devices: New Insulators, Devices and Radiation Effects, vol. 3, ch. 6 (Elsevier Science B.V., The Netherlands, 1999), pp. 405–493

4. P. Heremans, J. Witters, G. Groeseneken, H.E. Maes, Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation. IEEE Trans. Electron Devices 36, 1318–1335 (1989)

5. G. Groeseneken, H.E.Maes, N. Beltran, R.F. De Keersmaecker, A reliable approach to charge-pumping measurements in MOS transistors. IEEE Trans. Electron Devices 31, 42–53 (1984)

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