Generalized Bidirectional Limited Magnitude Error Correcting Code for MLC Flash Memories

Author:

Hussain Akram,Yu Xinchun,Luo Yuan

Publisher

Springer International Publishing

Reference18 articles.

1. Dolecek, L., Sala, F.: Channel coding methods for non-volatile memories. Found. Trends Commun. Inf. Theory 13(1), 1–28 (2016). Boston-Delft

2. Sala, F., Immink Schouhamer, K.A., Delecek, L.: Error control schemes for modern flash memories. IEEE Consum. Electron. Magz. 4(1), 66–73 (2015)

3. Huang, X., Kavcic, A., Ma, X., Dong, G., Zhang, T.: Multilevel flash memories: channel modeling, capacities and optimal coding rates. Int. J. Adv. Syst. Measur. 6(3 and 4), 364–373 (2013)

4. Cai, Y., Haratsch, E. F., Mutlu, O., Mai, K.: Error patterns in MLC NAND flash memory: measurement, characterization, and analysis. In: IEEE Design, Automation and Test in Europe Conference and Exhibition (DATE), pp. 521–526. IEEE, Dresden (2012)

5. Li, Q., et al.: Improving LDPC performance via asymmetric sensing level placement on flash memory. In: 22nd Asia and South Pacific Design Automation (ASP-DAC), pp. 560–565. IEEE, Tokyo (2017)

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