1. J.J. Clement, Electromigration reliability, in Design of High-Performance Microprocessor Circuits, ed. by A.P. Chandrakasan, W.J. Bowhill, F. Fox (IEEE Press, New York, 2001), Chapter 20, pp. 429–448
2. I.A. Blech, H. Sello, Mass Transport of Aluminum by Momentum Exchange with Conducting Electrons. USAF-RADC Series, United State Air Force - Rome Air Development Center. Located at the Rome Research Site on the Griffiss Business and Technology Park (former Griffiss AFB) at Rome, New York, vol. 5 (1966), pp. 496–505
3. J.R. Black, Mass transport of aluminum by moment exchange with conducting electrons, in Proceedings of the IEEE International Reliability Physics Symposium, pp. 148–159, Apr 1967
4. F.M. D’Heurle, Electromigration and failure in electronics: an introduction. Proc. IEEE 59(10), 1409–1417 (1971)
5. C. Ryu, K.-W. Kwon, A.L.S. Loke, H.Lee, T. Nogami, V.M. Dubin, R.A. Kavari, G.W. Ray, S.S. Wong, Microstructure and reliability of copper interconnects. IEEE Trans. Electron Devices 46(6), 1113–1120 (1999)