Materials and Processing of TSV-Reference-Cited by-同舟云学术

Materials and Processing of TSV

Published:2017 Issue: Volume: Page:47-69
ISSN:1437-0387
Container-title:3D Microelectronic Packaging
language:
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Author:

Kumar Praveen,Dutta Indranath,Huang Zhiheng,Conway Paul

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-44586-1_3

Reference61 articles.

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2. M. Stucchi, G. Katti, D. Velenis, TSV characterization and modeling, in: Three Dimensional System Integration: IC Stacking Process and Design, ed. by A. Papanikolaou, D. Soudris, R. Radojcic (Springer, New York, 2011)

3. P.S. Andry, C.K. Tsang, B.C. Webb, E.J. Sprogis, S.L. Wright, B. Dang, D.G. Manzer, Fabrication and characterization of robust through-silicon vias for silicon-carrier applications. IBM J. Res. Dev. 52, 571–581(2008)

4. Z. Xu, J.Q. Lu, High-speed design and broadband modeling of through-strata-vias (TSVs) in 3D integration. IEEE Trans. Compon. Pack. Manuf. Technol. 1, 154–162 (2011)

5. J.Q. Lu, Advances in materials and processes for 3D-TSV integration. ECS Trans. 45, 119–129 (2012)

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