1. Malik A et al, “Near-infrared photodetectors based on HglnTe-semiconductor compound” in Proceeding of SPIE Conference on Photodiode: Marerials and Devices IV , California, 3629 (1999), 433–442.
2. Grushka G G, Grushka Z M, and Gavaleshko N P, “The electrical properties of Hg3In2Te6 compound,” Ukrainian Physics Journal, (30) 1985, 304–307.
3. Galchinetskyi L P, Koshkin V M, and Kumakov V M, “Radiation tolerance effect in semiconductors with the stoichiometric vacancy,” Soviet Solid State of Pysics, 14(1972), 646–648.
4. Bakumenko V L, Bonakov A K, and GRUSHKA G G, “The perspective material for thermoresistors-Hg3In2Te6,” Electronnaya Technika: Materialy, (2) 1983, 75–77.
5. Wang Yiyi, Influence of surface treatment on the contact poperties between Hg3In2Te 6 wafer and mental electrode, Master’s thesis of Northwestern Polytechnical University, 2012.