1. 3D NAND flash panel discussion, hold by applied material technology, in IEDM 2013
2. Ann K (2014) Flash technology – present and future, in applied materials symposium, Taiwan, March 2014
3. Chang KP, Lue HT, Chen CP, Chen CF, Chen YR, Hsiao YH, Hsieh CC, Chen SH, Shih YH, Yang T, Chen KC, Hsieh KY, Hung CH, Lu CY (2012) An efficient memory architecture for 3D vertical gate (3DVG) NAND flash using plural island-gate SSL decoding and study of its program inhibit characteristics. International memory workshop (IMW), pp 25–28
4. Chang KP, Lue HT, Chang CS, Yeh WW, Hsieh CC, Hsiao YH, Shih YH, Lu CY (2013) Study of hot-electron assisted programming for split-page 3D vertical gate (VG) NAND Flash. International memory workshop (IMW), pp 143–146
5. Chen CP, Lue HT, Hsieh CC, Chang KP, Hsieh KY, Lu CY (2010) Study of fast initial charge loss and its impact on the programmed states Vt distribution of charge-trapping NAND Flash. International electron device meeting (IEDM), session 5–6, pp 118–121