Author:
Chandran Narendraraj,Andreadou Ariadne,Mantzari Alkyoni,Marinova Maya,Polychroniadis Efstathios K.
Publisher
Springer International Publishing
Reference17 articles.
1. J.A. Coopper Jr., Opportunities and technical strategies for silicon carbide device development. Mater. Sci. Forum 15, 389–393 (2002)
2. C.I. Harris, S. Savage, A. Konstantinov, M. Bakowski, P. Ericsson, Progress towards SiC products. Appl. Surf. Sci. 184, 393 (2001)
3. N. Schulze, D. Barrett, G. Pensl, Controlled growth of 15R-SiC single crystals by the modified Lely method. Phys. Status Solidi A 178(2), 645 (2000)
4. T. Kups, M. Voelskow, W. Skorupa, M. Soueidan, G. Ferro, J. Pezoldt, Lattice location determination of Ge in SiC by ALCHEMI, in Microscopy of Semiconducting Materials 2007, vol. 120 (2008), pp. 353–358
5. S.A. Reshanov, I.I. Parfenova, V.P. Rastegaev, Group III-V impurities in
$$\beta $$
β
-SiC: lattice distortions and solubility. Diamond Relat. Mater. 1278–1282 (2001)