Excited-State Properties of Thin Silicon Nanowires-Reference-Cited by-同舟云学术

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Excited-State Properties of Thin Silicon Nanowires

Published:2018 Issue: Volume: Page:1-18
ISSN:
Container-title:Handbook of Materials Modeling
language:
Short-container-title:

Author:

Yang Li

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-50257-1_37-1

Reference75 articles.

1. Albrecht S, Reining L, Del Sole R, Onida G (1998) Ab initio calculation of excitonic effects in the optical spectra of semiconductors. Phys Rev Lett 80:4510

2. An JM, Franceschetti A, Zunger A (2007) The excitonic exchange splitting and radiative lifetime in PbSe quantum dots. Nano Lett 7:2129–2135

3. Aspnes DE, Theeten JB (1980) Spectroscopic analysis of the interface between Si and its thermally grown oxide. J Electrochem Soc 127:1359

4. Beckman SP, Han J, Chelikowsky JR (2007) Quantum confinement effects in Ge [110] nanowires. Phys Rev B 74:165314

5. Blasé X, Rubio A, Louie SG, Cohen ML (1994) Stability and band gap constancy of boron nitride nanotubes. Europhys Lett 28:335

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Advancement on the Excitonic and Biexcitonic Properties of Low-Dimensional Semiconductors;Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology;2020-05-06

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