Nanoanalytical investigation of the dielectric gate stack for the realisation of III–V MOSFET devices

Author:

Longo P.,Craven A. J.,Holland M. C.,Thayne I. G.

Publisher

Springer Berlin Heidelberg

Reference4 articles.

1. Wang YC, Hong M., Kuo JM., Kwo J., Mannaerts JP, Chen YK and Cho Y., IEEE, Electron Device Letters 20, 457, 1999

2. Passlack M, Yu Z, Droopad R, Bowers B, Overgaard C, Abrokwah J, and Kummel AC, J Vacuum Science & Technology B17,1, 49–52, 1999

3. Longo P, Craven AJ, Scott J, Holland MC and Thayne IG proceedings of MSM XV, 2007

4. Authors would like to acknowledge EPSRC support under grant EP/F002610 and Mr B. Miller for TEM specimen preparation.

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