Electric field gradients at 151Eu sites in GaN
Author:
Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-540-78697-9_85.pdf
Reference11 articles.
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2. Bartels, J., Freitag, K., Marques, J.G., Soares, J.C., Vianden, R.: Incorporation of transition metal Hf in GaN. Hyperfine Interact. 20–121, 397–402 (1999)
3. Lorenz, K., Ruske, F., Vianden, R.: Reversible changes in the lattice site structure for In implanted into GaN. Appl. Phys. Lett. 80, 1–3 (2002)
4. Denninger, G., Reiser, D.: Determination of electric field gradients in semiconductors with high precision and high sensitivity. Phys Rev. B. 55, 5073–5079 (1997)
5. Fanciulli, M., Lindroos, M., Weyer, G., Moustakas, T.D.: 119Sn Mössbauer study of Ion Implanted GaN. Mat. Sci. Forum. 196–201, 61–64 (1995)
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