Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-540-36588-4_31.pdf
Reference7 articles.
1. Tsen, K. T. et al: ‘Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy’, Appl Phys. Lett. 86, 222103, 2005.
2. W. Liang et al.: ‘Observation of nonequilibrium longitudinal optical phonons in InN and its implications’, Appl Phys. Lett. 84, 3849, 2005.
3. Lu H et al: ‘Growth of thick InN by molecular beam epitaxy’, MRS Proc., 743, L4.10, 200
4. Tsen, K. T. et al: ‘Optical studies of high-field carrier transport of InN thick film grown on GaN’, J. Cryst. Growth, in press.
5. Bulatay, C, and Ridley, B. K.: ‘Theoretical assessment of electronic transport in InN’, Superlatt. Microstruc, 36, 465–471, 2004
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