Design and Distributed Computer Simulation of Thin p + –i–n + Avalanche Photodiodes Using Monte Carlo Model
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-540-25944-2_67
Reference20 articles.
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3. Li, K.F., Ong, D.S., David, J.P.R., Rees, G.J., Tozer, R.C., Robson, P.N., Grey, R.: Avalanche multiplication noise characteristics in thin GaAs p + –i–n + diodes. IEEE Trans. Electron Devices 45, 2102–2107 (1998)
4. Hu, C., Anselm, K.A., Streetman, B.G., Campbell, J.C.: Noise characteristics of thin multiplication region GaAs avalanche photodiodes. Appl. Phys. Lett. 69, 3734–3736 (1996)
5. Li, K.F., Ong, D.S., David, J.P.R., Robson, P.N., Tozer, R.C., Rees, G.J., Grey, R.: Low excess noise characteristics in thin avalanche region GaAs diodes. Electron. Lett. 34, 125–126 (1998)
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