1. S. Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, T. Numata, K. Usuda, Y. Moriyama, S. Nakaharai, J. Koga, A. Tanabe, N. Hirashita and T. Maeda, IEDM. Tech. Dig., p. 57, 2003.
2. H. Shang, H. Okorn-Schmidt, K.K. Chan, M. Copel, J.A. Ott, P. M. Kozlowski, S.E. Steen, S.A. Cordes, H.-S.P. Wong, E.C. Jones and W.E. Haensch, “High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric”, in IEDM Tech. Dig., p. 441, 2002.
3. C.O. Chui, H. Kim, D. Chi, B. Triplett, P.C. McIntyre and K.C. Saraswat, “A sub-400◦C germanium MOSFET technology with high-k dielectric and metal gate”, in IEDM Tech. Dig., p. 437, 2002.
4. C.H. Huang, M.Y. Yang, A. Chin, W.J. Chen, C.X. Zhu, B.J. Cho, M.-F. Li and D.L. Kwong, ” Very low defects and high performance Ge-on-insulator p-MOSFET’s with Al2 O3 gate dielectrics”, in VLSI Symp. Tech. Dig., pp. 119-120, 2003.
5. W.P. Bai, N. Lu, J. Liu, A. Ramirez, D.L. Kwong, D. Wristers, A. Ritenour, L. Lee and D. Antoniadis, “Ge MOS characteristics with CVD HfO2 gate dielectrics and TaN gate electrode” in VLSI Symp. Tech. Dig. 2003, pp. 121-122.