Publisher
Springer Berlin Heidelberg
Reference12 articles.
1. B. Agarwal, A. E. Schmitz, J. J. Brown, M. Matloubian, M. G. Case, M. Le, M. Lui and M. J. W. Rodwell, "112-GHz, 157 GHz, and 180-GHz InP HEMT traveling-wave amplifiers", IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 12, pp. 2553–2559, Dec. 1998.
2. Y. Ayasli, R. L. Mozzi, J. L. Vorhaus, L. D. Reynolds, R. A. Pucel, "A monolithic GaAs 1–13 GHz travelling wave amplifier", IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-30, No. 7, 12, pp. 976–981, July 1982.
3. D. Barras, F. Ellinger, H. Jöckel and W. Hirt, "Low supply voltage SiGe LNA for ultra-wideband frontends", IEEE Microwave and Wireless Component Letters, Vol. 14, No. 10, pp. 469–471, Oct. 2004.
4. J. B. Beyer, S. N. Prasad, R. C. Becker, J. E. Nordman, G. K. Hohenwarter, "MESFET distributed amplifier design guidelines", IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-32, No. 3, 12, pp. 268–275, March 1984.
5. E. M. Cherry, "Feedback amplifier configurations", IEE Proceedings on Circuits Devices and Systems,Vol. 147, No. 6, pp. 334–346, Dec. 2000.