Distribution of components in single crystals grown from completely mixed melts of Hg1−xCdxTe and Pb1−xSnxTe systems-Reference-Cited by-同舟云学术

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Distribution of components in single crystals grown from completely mixed melts of Hg1−xCdxTe and Pb1−xSnxTe systems

Published:1995-02 Issue:2 Volume:17 Page:205-208
ISSN:0392-6737
Container-title:Il Nuovo Cimento D
language:en
Short-container-title:Il Nuovo Cimento D

Author:

Fano V.,Ma W. Y.,Ortalli I.,Meletti G.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF02451596.pdf

Reference5 articles.

1. Tiller W. A., Jackson K. A., Rutter J. W. andChalmers B.,Acta Metall.,1 (1953) 428.

2. Chalmers B.,Principles of Solidification (John Wiley and Sons, New York, N.Y.) 1964.

3. Brice J. C.,The Growth of Crystals from Liquids (North-Holland Publishing Co., Amsterdam) 1973.

4. Maier H. andHasse J.,Growth, properties and applications of narrow-gap semiconductors, inCrystals,4 (Springer-Verlag, Berlin) 1980.

5. Fano V., Pergolari R. andZanotti L.,J. Mater. Sci.,14 (1979) 531.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Convection in the bridgman growth of narrow-gap semiconductors;Il Nuovo Cimento D;1995-09

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