Influence of the flow, etching time and reactor cleaning method on the etching rate and selectivity of reactive ion etching of SiO2 — Photoresist system-Reference-Cited by-同舟云学术

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Influence of the flow, etching time and reactor cleaning method on the etching rate and selectivity of reactive ion etching of SiO2 — Photoresist system

Published:1991-02 Issue:2 Volume:41 Page:191-198
ISSN:0011-4626
Container-title:Czechoslovak Journal of Physics
language:en
Short-container-title:Czech J Phys

Author:

Novotný Z.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF01598139.pdf

Reference10 articles.

1. Leaky M. F., Kaganowicz G.: Solid State Technol.30 (1987), No. 4, 99.

2. Duffy M. T., Corboy J. F., Soltis R. A.: RCA Rev.44 (1983), No. 3, 157.

3. Toyoda H., Itakura H., Komyia H.: Jpn. J. Appl. Phys.20 (1981) 667.

4. Rothbauer M., Novotný Z.: Czechoslovak patent No. 248 797, 1986.

5. Novotný Z., Horáček F.: Czechoslovak patent No. 253 792, 1987.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of resists on reactive ion etching;Czechoslovak Journal of Physics;1993-05

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