Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Mathematics
Link
http://link.springer.com/content/pdf/10.1007/BF02882247.pdf
Reference13 articles.
1. Fujieda, S., Matsumoto, Y., Structure control of GaN films grown on (100) GaAs substrates by GaAs pretreatments,Jpn. J. Appl. Phys., 1991, 30: L1665.
2. Yoshida, S., Okumura, H., Misawa, S. et al., Hetero-epitaxial growth of cubic GaN on GaAs by gas source MBE,Surf. Sci., 1992, 267: 50.
3. Kikuchi, A., Hoshi, H., Kishino, K., Substrate nitridation effects on GaN grown on GaAs substrates by MBE using radical Nitrogen source RF-,Jpn. J. Appl. Phys., 1994, 33: 688.
4. Okumura, H., Yoshida, S., Okashisa, T., Optical properties near the band gap on hexagonal and cubic GaN,Appl. Phys. Lett, 1994, 64: 2997.
5. Schikora, D., Hankeln, M., As, D. J., et al., Epitaxial growth and optical transition of cubic GaN films,Phys. Rev., 1996, 54(12): 8354.
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