Author:
Bonnoit Thierry,Nicolaidis Michael,Zergainoh Nacer-Eddine
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Reference39 articles.
1. Baeg S, Wen S, Wong R (2009) SRAM interleaving distance selection with a soft error failure model. IEEE Trans Nucl Sci 56(4):2111–2118
2. Bajura MA, Boulghassoul Y, Naseer R, DasGupta S, Witulski AF, Sondeen J, Stansberry SD, Draper J, Massengill LW, Damoulakis JN (2007) Models and algorithmic limits for an ECC-based approach to hardening sub-100-nm SRAMs. IEEE Trans Nucl Sci 54(4):935–945
3. Baumann R (2005) Soft errors in advanced computer systems. IEEE Des Test Comput 22(3):258–266
4. Baumann RC (2005) Radiation-induced soft errors in advanced semiconductor technologies. IEEE Trans Device Mater Reliab 5(3):305–316
5. Blum DR, Delgado-Frias JG (2007) Hardened by design techniques for implementing multiple-bit upset tolerant static memories, Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on, pp. 2786–2789, 27–30 May 2007
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Reducing Rollback Cost in VLSI Circuits to Improve Fault Tolerance;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2018-08