Development of a unidirectional cooling technique for synthesizing compound semiconductors in 10 m drop tower-Reference-Cited by-同舟云学术

Development of a unidirectional cooling technique for synthesizing compound semiconductors in 10 m drop tower

Published:2004-06 Issue:2 Volume:15 Page:13-17
ISSN:0938-0108
Container-title:Microgravity - Science and Technology
language:en
Short-container-title:Microgravity Sci. Technol

Author:

Mamiya Mikito,Tsurue Takashi,Miyazaki Hiroyuki,Okutani Takeshi

Publisher

Springer Science and Business Media LLC

Subject

Applied Mathematics,General Physics and Astronomy,General Engineering,Modelling and Simulation

Link

http://link.springer.com/content/pdf/10.1007/BF02870954.pdf

Reference16 articles.

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2. T. Nishinaga, P. Ge, C. Huo, J. He andT. Nakamura. Melt growth of striation and etch pit free GaSb under microgravity. Journal of Crystal Growth 174(1997)96

3. K. Kinoshita andT. Yamada. Pbl-xSnxTe crystal growth in space. J. Crystal Growth 147(1995)91

4. D.C. Gillies, S.L. Lehoczky, F.R. Szofran, D.A. Watring, H.A. Alexander andG.A. Jerman. Effect of residual accelerations during microgravity directional solidification on mercury cadmium telluride on the USMP-2 misson. J. Crystal Growth 174(1997)101

5. E.W. Vekris, R.W. Smith, M.C. Tunnicliffe andG. Campbell. Use of the ZARM Drop Tower to Study Solidification in Undercooled Liquid Metals. Microgravity sci. technol. 4(1997)178

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