SiC bonding in ( C60)n Sim clusters-Reference-Cited by-同舟云学术

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SiC bonding in ( C60)n Sim clusters

Published:2001-10 Issue:1 Volume:16 Page:337-340
ISSN:1434-6060
Container-title:The European Physical Journal D
language:
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Author:

Mélinon P.,Tournus F.,Masenelli B.,Perez A.,Pellarin M.,Lermé J.,Broyer M.,Champagnon B.

Publisher

Springer Science and Business Media LLC

Subject

Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/s100530170124.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Organic/metal interface–modulated magnetism in [Fe/C60]3 multilayers and Fe-C60 composites;Nanotechnology;2020-05-21

2. Temperature Dependent Electrical Resistance of Proton Irradiated and Non-irradiated C60 Micro-rods;Materials Today: Proceedings;2015

3. Stability of silicon-doped C60 dimers;The Journal of Chemical Physics;2007-01-28

4. Silicon-Carbide Nano-Clusters: A Pathway to Future Nano-Electronics;Journal of Computational and Theoretical Nanoscience;2006-06-01

5. Comment on “In situ x-ray photoelectron spectroscopic and density-functional studies of Si atoms adsorbed on a C60 film” [J. Chem. Phys. 121, 11351 (2004)];The Journal of Chemical Physics;2005-06-15

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