Author:
Kawashima Shoichiro,Cross Jeffrey S.
Reference72 articles.
1. L. Moll and Y. Tarui, “A new solid state memory resistor," IEEE Trans. Electron Devices, vol. 10, no. 6, p. 338, Sept. 1963.
2. J.T. Evans and R. Womack, “An experimental 512-bit nonvolatile memory with ferroelectric storage cell," IEEE J. Solid-State Circuits, vol. 23, no. 5, pp.1171–1175, Oct. 1998.
3. A. Sheikholeslami and P. Gulak, “A survey of circuit innovations in ferroelectric random-access memories," Proc. IEEE, vol. 88, no. 5, pp.667–789, May 2000.
4. J. F. Scott, “Ferroelectric Memories," Advanced Microelectronics, Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co.KG, 2000.
5. H. Ishiwara, M. Okuyama, and Y. Arimoto (Eds,) “Ferroelectric random access memories," Fundamentals and applications, Topics in applied physics, vol. 93, Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, 2004.
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献