A comparison between growth of direct and pulse current electrodeposited crystalline SnO2 films; electrochemical properties for application in lithium-ion batteries

Author:

Hessam Ramtin,Najafisayar PooriaORCID,Rasouli Seyedeh Sepideh

Abstract

AbstractTin oxide (SnO2) films were electrodeposited on graphite substrates using direct and pulse current electrodeposition techniques. The influence of applied current density on the morphological properties, crystal structure, and electrochemical behavior of the resulting films were studied by scanning electron microscope, X-ray diffraction spectroscopy, Mott–Schottky analysis, cyclic voltammetry, and electrochemical impedance spectroscopy techniques. The results showed that pulse electrodeposited films have porous flower-like morphology with smaller crystallite size and high donor density in comparison with direct current electrodeposited films that include equiaxed particles in their morphologies, such characteristics give them better electrochemical performance (higher degree of reversibility, higher specific capacitance, and faster lithium-ion diffusion) than those films that were synthesized by conventional direct current electrodeposition method. Furthermore, using higher applied current densities leads to the improvement of SnO2 films’ electrochemical performance due to the formation of the films with finer morphology that include more porosity and oxygen vacancies in their respective crystal structure.

Funder

Shiraz University

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Fuel Technology,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3