Impact ionization in crossed electric and magnetic fields in polar semiconductors-Reference-Cited by-同舟云学术

Impact ionization in crossed electric and magnetic fields in polar semiconductors

Published:1978-03 Issue:1 Volume:32 Page:15-22
ISSN:0340-224X
Container-title:Zeitschrift f�r Physik B Condensed Matter and Quanta
language:en
Short-container-title:Z Physik B

Author:

Bruhns H.,H�bner K.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF01322181.pdf

Reference33 articles.

1. For a review, see Chynoweth, A.G. in: Willardson, R.K., Beer, A.C., Eds., Semicond. and Semimetals Vol. 4, p. 263. New York: Acad. Press 1975 M�nch, W., in: Madelung, O., Ed., Festk�rperprobleme9, 172. Braunschweig: Vieweg 1969

2. Thompson, A.H., Kino, G.S.: IBM J. Res. Develop.13, 616 (1969) and J. Appl. Phys.41, 3064 (1970)

3. Suzuki, K.: Jap. J. Appl. Phys.4, 42 (1965)

4. Ferry, D.K., Porter, W.A.: IBM J. Res. Develop.13, 621 (1969)

5. Schneider, W., Kirchesch, P.: Z. Physik B29, 81 (1978)

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2. Electron runaway in strong E perpendicular to H fields and breakdown in n-InSb;Journal of Physics C: Solid State Physics;1980-11-30

3. Impact Ionization and Magneto-Transport in InSb in High Crossed Electric and Magnetic Fields;physica status solidi (b);1980-08-01

4. Impact ionisation and Auger recombination involving traps in semiconductors;Journal of Physics C: Solid State Physics;1980-04-30