1. Sanchez, J.J. and T.A. DeMassa, Modeling gate emissions: A review - Part I. Microelectronic Eng., 1993. 20: p. 185
2. Krisch, K.S., J.D. Bude, and L. Manchanda, Gate Capacitance Attenuation in MOS Devices with Thin Gate Dielectrics. IEEE Electron Dev. Lett., 1996. 17(11): p. 512
3. Gundlach, K.H., Zur Berechnung des Tunnelstroms Durch Eine Trapezförmige Potentialstufe. Solid-State Electronics, 1966. 9: p. 949
4. Lewicki, G. and J. MaserjianOscillations in MOS tunnelingJ. Appl. Phys., 1975. 46(7): p. 3032
5. Kramer, T.A., K.S. Krisch, and D.P. Monroe, Characterization of Thin SiO2 Dielectrics Using Room-Temperature Tunneling Current Oscillation. Technical Memorandum, Lucent Technology, 1996