Author:
Haase Joachim,Dietrich Manfred
Reference25 articles.
1. International technology roadmap for semiconductors, executive summary. http://www.itrs.net/Links/2009ITRS/2009Chapters_2009Tables/2009_ExecSum.pdf (2009)
2. Dennard, R., Gaensslen, F., Rideout, V., Bassous, E., LeBlanc, A.: Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE Journal of Solid-State Circuits 9(5), 256–268 (1974)
3. Meer, P., van Staveren, A.R., M., A.H.: Low-Power Deep Sub-Micron CMOS Logic, 1 edn. Springer (2004)
4. Roy, K., Mukhopadhyay, S., Mahmoodi-Meimand, H.: Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits. Proceedings of the IEEE, 91(2), 305–327 (2003)
5. Bohr, M.: A 30 year retrospective on dennard’s MOSFET scaling paper. IEEE Solid-State Circuits Newsletter 12, 11–13 (2007)
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献